Lansheng Technology

  【Lansheng Technology News】 Renesas Electronics recently announced the successful design, testing and launch of a 32-bit CPU core based on the open standard RISC-V instruction set architecture (ISA). As the first manufacturer in the industry to independently develop CPU cores for the 32-bit general-purpose RISC-V market, Renesas has created an open and flexible platform for the Internet of Things, consumer electronics, healthcare and industrial systems. The new RISC-V CPU core will expand Renesas’ existing 32-bit microcontroller (MCU) IP product lineup, including the proprietary RX product family and the RA product family based on the Arm® Cortex®-M architecture. RISC-V is an open ISA that is rapidly gaining popularity in the semiconductor industry because of its flexibility, scalability, high energy efficiency, and open ecosystem. Currently, many MCU suppliers have established joint investment alliances to accelerate the development of RISC-V products, and Renesas has successfully i

  【Lansheng Technology News】 Texas Instruments Incorporated today announced a new family of low-power gallium nitride products that can help increase power density, significantly improve system efficiency, and reduce the size of AC/DC consumer power electronics and industrial systems. Texas Instruments' entire line of GaN field-effect transistors integrate gate drivers to solve common thermal design issues, keeping adapters cool while delivering higher power in a smaller form factor. The new GaN FET portfolio with integrated gate drivers includes the LMG3622, LMG3624 and LMG3626, providing the industry’s most accurate integrated current sensing capabilities. Integrated current sensing eliminates the need for external shunt resistors and reduces associated power losses by up to 94%, helping designers significantly improve efficiency compared to traditional current sensing circuits using discrete GaN and silicon FETs. Dramatically improve energy efficiency and simplify thermal desig

  【Lansheng Technology News】 Samsung will commercialize a new generation of OLED panels in 2025. Currently, the red sub-pixels and green sub-pixels in Samsung OLED panels use phosphorescent materials, and the blue sub-pixels use fluorescent materials. In the new generation of OLED panels, Samsung has replaced the original fluorescent materials with phosphorescent materials, thus greatly improving the luminous efficiency. The data shows that the phosphorescence luminescence efficiency can reach 100%, while the maximum fluorescence luminescence efficiency is only 25%. It is reported that the main difference between phosphorescent OLED and fluorescent OLED materials is reflected in the internal quantum efficiency (IQE) because their light-emitting mechanisms are different. Fluorescent OLED light-emitting materials use the singlet state to emit light, while phosphorescent OLED light-emitting materials can use the triplet state to emit light, and their luminous efficiency can be four tim

  【Lansheng Technology News】According to the latest financial reports of the world's major MCU original manufacturers, judging from the trend of industry inventory since this year, it is basically certain that 2023Q1 will reach the peak of industry inventory, Q2 will slowly pull back, and Q3 will decline relatively significantly, but the overall inventory is still relatively high. Domestic manufacturers focusing on consumer products (including Taiwanese manufacturers) have basically stopped their price wars, indicating that the industry's price reduction and destocking cycle has improved, corresponding to the current rebound in demand for smartphones, PCs, etc. We all know that the main demands of leading MCU manufacturers represented by Infineon , NXP and ST ST are concentrated in the automotive/industrial field. Chinese manufacturers such as Holtek (Holtek) of Taiwan, GigaDevice and Zhongying Technology mainly focus on consumer products. Based on the comparison of the av

  【Lansheng Technology News】November 30, 2023: Nexperia today announced the launch of its first silicon carbide (SiC) MOSFET and released two 1200 V discrete devices in 3-pin TO-247 packages with RDS(on) of 40 mΩ and 80 mΩ respectively. NSF040120L3A0 and NSF080120L3A0 are the first products released in Nexperia's SiC MOSFET product portfolio. Subsequently, Nexperia will continue to expand the product lineup, launching a variety of devices with different RDS(on), and providing through-hole packaging and surface mount packaging options. The two devices launched this time have high availability and can meet the demand for high-performance SiC MOSFETs in automotive and industrial applications such as electric vehicle (EV) charging piles, uninterruptible power supplies (UPS), and solar and energy storage system (ESS) inverters. RDS(on) affects conduction power loss and is a key performance parameter for SiC MOSFETs. Nexperia found that this is also a factor that limits the performanc