Nexperia Launches E-mode GAN FETs Supporting Low-Voltage and High-Voltage Applications

 


Nexperia today announced the launch of the first E-mode (enhanced) power GaN FETs supporting low voltage (100/150 V) and high voltage (650 V) applications. Nexperia has added seven new E-mode devices to its cascaded GaN product line. From GaN FETs to other silicon-based power devices, Nexperia's rich product portfolio can provide designers with the best choice.


Nexperia's new products include five 650 V rated E-mode GaN FETs with RDS(on) values between 80 mΩ and 190 mΩ, available in DFN 5x6 mm and DFN 8x8 mm packages. These products improve power conversion efficiency in high-voltage (<650 V), low-power datacom/telecom, consumer charging, solar and industrial applications, and can also be used in high-precision brushless DC motor and compact server designs to Achieve higher torque and more power.


Nexperia now also offers 100 V (3.2 mΩ) GaN FETs in WLCSP8 packages and 150 V (7 mΩ) GaN FETs in FCLGA packages. These devices are suitable for a variety of low-voltage (<150 V), high-power applications, such as high-efficiency DC-DC converters for data centers, fast charging (e-mobility class and USB-C class), small size LiDAR transceivers, low Noisy Class D audio amplifiers and higher power density consumer devices such as cell phones, laptops and game consoles.


Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, our main brands are STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, ect.

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com



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