STMicroelectronics GaN Drivers Integrated Galvanic Isolation for Superior Safety and Reliability
【Lansheng Technology Information】On September 6, 2023, STMicroelectronics launched the first gallium nitride (GaN) transistor gate driver with galvanic isolation. The new product STGAP2GS reduces the chip size and reduces the cost of the bill of materials. It can meet the higher requirements of applications for energy efficiency, safety and electrical protection of wide bandgap chips. The single-channel driver can interface to voltage rails up to 1200V, while the STGAP2GSN narrow version can interface to voltage rails up to 1700V, with gate drive voltages up to 15V. Capable of sinking and sourcing up to 3A into the connected GaN transistor gate, the driver provides precise control over the switching operation of the power transistor even at high operating frequencies.
The propagation delay of STMicroelectronics’ STGAP2GS across the isolation barrier is extremely short, only 45ns, and the dynamic response is fast. Additionally, dV/dt transient tolerance of ±100V/ns over the entire operating temperature range prevents unwanted changes in transistor gate current. The STGAP2GS has independent sink and source current pins for easy adjustment of gate drive operation and performance.
The STGAP2GS driver eliminates the need for optically isolated discrete components, facilitating the adoption of efficient and robust GaN technology for consumer electronics, industrial control, and other products and equipment. Target applications include computer server power supplies, factory automation equipment, motor drives, solar power generation, wind power generation systems, home appliances, home fans and wireless chargers.
In addition to integrated galvanic isolation, the new drivers feature built-in system protection features, including thermal shutdown and undervoltage lockout (UVLO) optimized for GaN technology, ensuring the reliability and robustness of the drivers.
Two demo boards, EVSTGAP2GS and EVSTGAP2GSN, respectively integrate standard version STGAP2GS and narrow version STGAP2GSN with ST's SGT120R65AL 75mΩ, 650V enhancement mode GaN transistors to help users evaluate the driver's functions.
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