STMicroelectronics’ new 1350V series of IGBT transistors improves ruggedness and energy efficiency

 


【Lansheng Technology News】September 11, 2023 – STMicroelectronics’ new series of IGBT transistors increases the breakdown voltage to 1350V and extends the maximum operating temperature to 175°C. The higher rating ensures that the transistor has better performance under all operating conditions. Large design margins, variable performance and longer-term reliability.


STMicroelectronics' newly launched STPOWER IH2 series IGBTs also improve power conversion energy efficiency, and the relevant parameters are very good. For example, the saturation voltage Vce(sat) is very low, ensuring that the device dissipates very little power in the on-state. The voltage drop of the freewheeling diode is very low and the turn-off energy is optimized, allowing single-switch quasi-resonant converters operating at frequencies from 16kHz to 60kHz to be more energy efficient.


STMicroelectronics' new IGBTs have good deformation resistance and energy efficiency, making them ideal for electromagnetic heating equipment, including kitchen stoves, inverter microwave ovens, rice cookers and other household appliances. In 2kW applications, STMicroelectronics' new IGBT devices reduce power consumption by 11%.


In addition, Vce(sat) has a positive temperature coefficient effect, and the tight parameter distribution between devices helps simplify the design and easily connect multiple IGBT tubes in parallel to meet the needs of high-power applications.


The two early devices of this series, 25A STGWA25IH135DF2 and 35A STGWA35IH135DF2, are now in mass production and adopt standard TO-247 long-lead power packages.


Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

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