Toshiba Launches 3rd-Generation SiC MOSFETs for Industrial Equipment in 4-Pin Packages That Reduce Switching Losses

 


【Lansheng Technology Information】August 31, 2023 - Toshiba announced today that it has launched a silicon carbide (SiC) MOSFET in a 4-pin TO-247-4L(X) package that helps reduce switching losses - "TWxxxZxxxC series", which uses Toshiba's latest [1] 3rd generation SiC MOSFET chips to support industrial equipment applications. In this series, five models have a rated voltage of 650V, and the other five models have a rated voltage of 1200V. Ten products have been shipped in batches today.


The new products are the first in Toshiba's SiC MOSFET lineup to be available in a 4-pin TO-247-4L(X) package, which supports the use of a Kelvin connection at the source terminal of the gate drive signal, helping to reduce source lines within the package inductance, thereby improving high-speed switching performance. Compared with Toshiba's current product TW045N120C in a 3-pin TO-247 package, the new TW045Z120C has about 40% lower turn-on loss and about 34% lower turn-off loss [2]. This improvement helps reduce device power consumption.


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