1γ DRAM, 321-layer NAND, the competition for advanced technologies among major storage manufacturers continues
【Lansheng Technology News】Although the storage industry is in a downward cycle due to economic headwinds and high inflation, the competition for advanced technologies by major storage manufacturers continues.
For DRAM chips, advanced processes mean high energy efficiency, high capacity, and better end-use experience. Currently, the 10nm level of DRAM advanced process technology has reached the fifth generation. Micron calls it 1β DRAM and Samsung calls it 1b DRAM.
After Micron started mass production of 1β DRAM in October last year, it plans to mass produce 1γ DRAM in 2025. This will be Micron’s first generation using extreme ultraviolet (EUV) process technology. Currently, Micron only has an EUV manufacturing plant in Taichung. Therefore, the 1γ process is bound to be mass-produced at the Taichung factory first, and the Japanese factory is also expected to introduce EUV equipment in the future. Samsung plans to enter the 1bnm process stage in 2023, the chip capacity will reach 24Gb (3GB) - 32Gb (4GB), and the native speed will be 6.4-7.2Gbp.
In the field of NAND Flash, NAND Flash has currently exceeded the 200-layer stacking mark, and storage manufacturers are continuing to work on higher layer counts. On August 9, SK Hynix demonstrated the world's first 321-layer NAND flash memory sample for the first time at the Flash Memory Summit 2023, which was 59% more efficient than the previous generation 238-layer 512Gb. SK Hynix said it will further improve 321-layer NAND flash memory and plans to start mass production in the first half of 2025.
In addition, Micron plans to launch higher-layer products such as 2YY, 3XX and 4XX after 232 layers; Kioxia and Western Digital are also actively exploring 3D NAND technology with more than 300 layers, more than 400 layers and more than 500 layers; Samsung plans to The ninth-generation 3D NAND will be launched in 2025 (expected to reach 280 layers), the tenth-generation 3D NAND (expected to reach 430 layers) will be launched in 2025-2026, and 1000-layer NAND Flash will be achieved by 2030.
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