Rohm GaN devices bring a disruptive revolution, reducing volume by 99% and reducing loss by 55%

 

【Lansheng Technology News】Today, power supplies and motors account for more than half of the world's electricity consumption. In order to achieve a carbon-free society, how to improve their efficiency has become a global social issue. Power devices are the key to improving their efficiency, and new materials such as SiC and GaN have high hopes for further improving the efficiency of various power supplies.

1. Breakthrough of GaN HEMT

Among power devices, GaN HEMT is highly anticipated as a device that is very helpful in improving power conversion efficiency and achieving device miniaturization. ROHM will put 150 V GaN HEMTs with a gate voltage of up to 8 V into mass production in 2022; in March 2023, it established control IC technology that can maximize the performance of GaN. In May 2023, in order to help improve the efficiency and miniaturization of various power supply systems, ROHM launched 650 V withstand voltage GaN HEMTs whose device performance has reached the industry's highest level. ROHM named this GaN device that contributes to energy saving and miniaturization the "EcoGaN™ Series" and is continuously working to further improve the performance of the device.

2. New products integrating power and simulation

However, GaN HEMT's gate processing is difficult compared to Si MOSFETs and must be combined with a driver for driving the gate.

Against this market background, ROHM combines its two core technological advantages of power and analog to develop the Power Stage IC "BM3G0xxMUV-LB" that integrates power semiconductors - GaN HEMTs and analog semiconductors - gate drivers. The advent of this product makes it easy to install GaN devices, known as "next-generation power semiconductors."

The new product integrates a new generation of power devices, 650 V GaN HEMT, with dedicated gate drivers, new functions and peripheral components that can maximize the performance of GaN HEMT. In addition, the new product supports a wider drive voltage range (2.5~30 V) and has the performance to support various controller ICs for primary power supplies, so it can replace existing Si MOSFETs (Super Junction MOSFETs / hereinafter referred to as "Si MOSFETs" ). Compared with Si MOSFET, the device volume can be reduced by about 99% and the power loss can be reduced by about 55%, so lower loss and smaller size can be achieved at the same time.

The new product is ideal for various applications with built-in primary power supply (AC-DC or PFC circuit), such as consumer electronics (white goods, AC adapters, computers, TVs, refrigerators, air conditioners) and industrial equipment (servers, OA equipment), etc.

3. Summary

In addition to device development, ROHM also actively establishes strategic partnerships with relevant companies in the industry and promotes joint development. By helping to improve the efficiency and miniaturization of application products, ROHM continues to contribute to solving social problems. In the future, ROHM will continue to improve driving technology and control technology to further popularize GaN devices in various applications.

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