STMicroelectronics’ new 200W and 500W devices enhance performance and value of MasterGaN series

 


【Lansheng Technology News】STMicroelectronics’ MasterGaN1L and MasterGaN4L gallium nitride series products have launched the next generation of integrated gallium nitride (GaN) bridge chips, which use wide bandgap semiconductor technology to simplify power supply design and achieve the latest ecological design goals.


STMicroelectronics' MasterGaN product family combines two 650V high electron mobility GaN transistors (HEMTs) with optimized gate drivers, system protection features, and an integrated bootstrap diode to power the device at startup. Integrating these features eliminates the need for designers to deal with GaN transistor gate drive development challenges. Both products feature compact power packages that improve reliability, reduce bill of materials costs, and simplify circuit layout.


The two new devices contain two GaN HEMT transistors connected as a half-bridge, a configuration suitable for developing switches using active-clamped flyback converters, active-clamped forward converters, or resonant converter topologies. power supplies, adapters and chargers. MasterGaN1L and MasterGaN4L are pin-compatible with MasterGaN1 and MasterGaN3 respectively. Compared with earlier products, the new product has re-optimized the conduction time, supports higher switching frequency, and achieves higher energy efficiency under low load conditions. The improvement in energy efficiency is especially obvious in the resonant topology.


The input pins accept signal voltages from 3.3V to 15V, and input hysteresis and pull-down resistors facilitate direct connection of the inputs to a controller, such as a microcontroller, DSP signal processor, or Hall-effect sensor. A dedicated shutdown pin helps designers save system power. The timing of the two GaN HEMT transistors is accurately matched, and an interlock protection circuit is integrated to prevent the switch tubes on the bridge arm from being cross-conducted.


The MasterGaN1L HEMT has an on-resistance RDS(on) of 150mΩ and a rated current of 10A, making it suitable for applications with a maximum power of 500W. No-load power consumption is only 20mW, supporting high conversion efficiency, allowing designers to meet the industry's strict standby power consumption and average energy efficiency goals. MasterGaN4L HEMT is positioned for applications with a maximum power of 200W, with an on-resistance RDS(on) of 225mΩ and a rated current of 6.5A.


The EVLMG1LPBRDR1 and EVLMG4LPWRBR1 demonstration boards are now available to help developers evaluate the capabilities of each product. These two boards integrate a GaN half-bridge power module optimized for LLC applications, allowing developers to quickly create new topologies using MasterGaN1L and MasterGaN4L devices without using a complete PCB design.


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