Transphorm partners with Allegro MicroSystems to improve gallium nitride power system performance in high-power applications

 


【Lansheng Technology News】Transphorm, Inc. recently announced a collaboration with Allegro MicroSystems, Inc., a global leader in power and sensing semiconductor technology for motion control and energy-saving systems, using Transphorm's SuperGaN® field effect transistors and Allegro's AHV85110 isolated gate driver. Expanding GaN power system designs for high-power applications.


Transphorm's SuperGaN FETs can be used in a variety of topologies and are available in a variety of packaging formats to support a wide range of power levels to meet different end market application requirements. SuperGaN FETs have been used in a variety of commercial products and have significantly improved reliability, power density and efficiency in high-power systems.


Allegro's self-powered, single-channel, isolated gate driver ICs are optimized for driving GaN FETs in a variety of applications and circuits. It has been verified that compared with similar gate drivers from competitors, the driving efficiency of AHV85110 is increased by 50%. Compared with other solutions on the market, this unique solution greatly simplifies system design, reduces circuit interference by 10 times, and reduces common-mode capacitance by 15 times.


Interested users can test this collaborative solution from Transphorm and Allegro using Allegro's APEK85110KNH-06-T evaluation board. The evaluation board integrates AHV85110 drivers suitable for different applications and three TOLL packaged devices recently released by Transphorm. The three Transphorm devices have on-resistances of 35, 50 and 72 milliohms respectively.


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