Infineon expands product line of radiation-hardened asynchronous static RAM with integrated ECC

 


【Lansheng Technology News】January 15, 2024 Edge computing and inference on satellites enable near real-time data analysis and decision-making. This becomes increasingly important as the number of connected devices and the amount of data they generate continues to grow. To meet these high-performance computing needs in space applications, Infineon Technologies LLC Memory Solution, a division of Infineon Technologies AG, recently announced the launch of the latest radiation-hardened (rad hard) asynchronous static random access designed with Infineon's patented RADSTOP™ technology memory. The new products are designed for space and other harsh environment applications where high reliability and performance are critical.


In high-performance space computing, data buffering requires more memory than the MCU or FPGA on-chip memory can provide. Memory must provide higher performance for real-time processing applications and have excellent radiation hardness to meet mission requirements in harsh environments. Infineon's new radiation-hardened static random access memory (SRAM) is available in 8-, 16- and 32-bit wide configurations with embedded error correction code (ECC) capable of single-bit error correction. This advanced technology enables error-correcting code (ECC) logic to detect and correct single-bit errors in any read data word during the read cycle.


Dr. Helmut Puchner, Vice President and Researcher at Infineon Technologies Aerospace & Defense said: “Radiation effects lead to unavoidable bit errors in static random access memories (SRAM), and the use of system-level error correcting codes (ECC) increases design complexity and latency. Infineon’s RADSTOP asynchronous static random access memory (SRAM) provides an extremely reliable single-chip solution that addresses these issues while meeting the radiation-resistant performance requirements of the aerospace industry.”


Infineon's leading RADSTOP technology achieves radiation resistance through independent design and process enhancement technology, and can meet all radiation resistance requirements in extreme environments. This new radiation-hardened memory has obtained QML-V certification to ensure reliability and life cycle requirements in extreme environments. With access times as short as 10 ns, these semiconductor devices are the fastest options available. Additionally, they offer the smallest footprint for highest density and lowest quiescent current. RADSTOP memory solutions extend the computing limits of the entire system while providing size, weight and power advantages as well as greater design flexibility.


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