Samsung releases its first 36GB HBM3E 12H DRAM to meet higher requirements in the artificial intelligence era

 


【Lansheng Technology News】Samsung Electronics announced today that the company successfully released its first 12-layer stacked HBM3E DRAM - HBM3E 12H, which is Samsung's largest HBM product to date.


Samsung HBM3E 12H supports all-weather maximum bandwidth up to 1280GB/s, and the product capacity also reaches 36GB. Compared with Samsung's 8-layer stacked HBM3 8H, HBM3E 12H has significantly increased bandwidth and capacity by more than 50%.


"Artificial intelligence service providers in the current industry increasingly require higher-capacity HBMs, and our new product HBM3E 12H is designed to meet this demand," said Yongcheol Bae, executive vice president of the Memory Product Planning Team at Samsung Electronics , “This new storage solution is part of our efforts to develop multi-layer stacked HBM core technology and provide technology leadership for the high-capacity HBM market in the era of artificial intelligence.


HBM3E 12H uses advanced hot-pressed non-conductive film (TC NCF) technology to keep the height of 12-layer and 8-layer stack products consistent to meet current HBM packaging requirements. This technology will bring even more benefits at higher stacks as the industry looks to alleviate chip bending issues caused by wafers. Samsung has been working to reduce the thickness of its non-conductive film (NCF) material and minimize the gap between chips to 7 micrometers (µm) while eliminating gaps between layers. These efforts have increased the vertical density of its HBM3E 12H product by more than 20% compared to its HBM3 8H product.


Samsung's advanced thermally pressed non-conductive film (TC NCF) technology also improves HBM's thermal performance by allowing the use of bumps of different sizes between chips. During the chip bonding process, smaller bumps are used in signal transmission areas, while larger bumps are placed in areas that require heat dissipation. This approach helps improve product yield.


With the exponential growth of artificial intelligence applications, HBM3E 12H is expected to become the preferred solution for future systems to meet the system's demand for larger storage. With ultra-high performance and ultra-large capacity, HBM3E 12H will help customers manage resources more flexibly while reducing the total cost of ownership (TCO) of the data center. Compared with HBM3 8H, HBM3E 12H is equipped with artificial intelligence applications. It is expected that the average speed of artificial intelligence training can be increased by 34%, and the number of inference service users can also increase by more than 11.5 times [1].


Currently, Samsung has begun to provide HBM3E 12H samples to customers and is expected to begin mass production in the second half of this year.


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