Micron launches high-speed memory, performance increased by 50%

 


【Lansheng Technology News】Micron’s new generation memory has been shipped to data center and PC customers. Micron 1β DDR5 DRAM can expand computing capabilities and assist data centers and client platforms with higher performance, supporting AI training and inference, generative AI, data analysis, in-memory databases, etc.


The 16Gb DDR5 memory launched by Micron, with its leading 1β process node technology, the built-in system function rate of Micron 1β DDR5 DRAM can reach 7,200MT/s. Compared with the previous generation product, the performance can be increased by 50%, and the power consumption per watt is Can be reduced by 33%.


The new 1β DDR5 DRAM products can reach speeds of 4,800MT/s to 7,200MT/s in existing modular densities, and are suitable for data center and client applications.


Brian Callaway, corporate vice president of Micron's core computing DRAM product design engineering division, pointed out that mass production of 1β DDR5 DRAM and providing it to customers and data center platforms is a major milestone in the industry. With the company's cooperation with ecosystem partners and customers, it will accelerate High-performance memory products are popularized.


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